Applications are invited from interested and eligible candidates for the Junior Research Fellow (JRF)/ Project Associate – I positions at the National Institute of Technology, Tiruchirappalli. This opportunity is open to Indian Nationals who meet the specified criteria. Candidates are encouraged to submit their applications in the prescribed format along with a detailed CV as per the norms.
🏢 NAME OF THE INSTITUTION
NATIONAL INSTITUTE OF TECHNOLOGY, TIRUCHIRAPPALLI
🏫 ABOUT INSTITUTION
The National Institute of Technology, Tiruchirappalli (NIT Trichy) is one of India’s premier engineering institutions, known for its high academic standards and research excellence. Located in Tamil Nadu, NIT Trichy offers a vibrant campus life and a conducive environment for research and innovation.
💼 DESIGNATION / JOB POSITION
- Junior Research Fellow (JRF)
- Project Associate – I
🎯 Project Details
- Title of the Project – “ Design and Development of High-Performance Reconfigurable Bidirectional DC-DC Converter with Advanced Modulation Strategy for Wide Load and Voltage Range Applications.”
- Name of the Funding Agency – ANRF – Advanced Research Grant (ARG).
- Duration of Project – Initial appointment is for the period of one year, which can be extended up to three years or till the project end date solely based on the satisfactory performance.
- Principal Investigator – Dr. Shelas Sathyan
🎓 QUALIFICATION & EXPERIENCE / REQUIREMENT
For the Junior Research Fellow (JRF) position, candidates must have a B.E/B.Tech. with First class in Electrical Engineering (EE) / Electrical and Electronics Engineering (EEE) / Electrical and Computers Engineering / Electrical and Instrumentation Engineering (EIE) with a valid GATE score. Preference is given to those with an M.E/M.Tech. in Power Electronics or equivalent.
For the Project Associate I position, candidates should have a B.E/B.Tech. with First class in the relevant fields. Preference is given to those with an M.E/M.Tech. in Power Electronics or equivalent.
The details of the required qualifications & experience along with other relevant information are available on the Institute Website.
🏆 SALARY / REMUNERATION / PAY SCALE ₹
For GATE qualified candidates: JRF: First two years Rs. 37,000 + HRA and Rs. 42,000 + HRA for the 3rd year. For Non-GATE candidates: Project Associate I: First two years Rs. 30,000 + HRA and Rs. 33,000 + HRA for the 3rd year.
💺 JOB LOCATION
National Institute of Technology, Tiruchirappalli, Tamil Nadu, India.
📝 HOW TO APPLY
Interested and eligible candidates are invited to submit their applications, including an updated Curriculum Vitae, copies of relevant certificates, and a passport-sized photograph, to the specified email address. Applications should be submitted in the prescribed format available on the institute’s website by 07 August 2026. Candidates must send a scanned copy of their duly filled applications along with the relevant supporting documents as a single PDF document to apclabnitt@gmail.com and shelassathyan@nitt.edu. Additionally, applicants are requested to fill the Google form provided in the notification.
Applicants are also requested to fill the google form attached below: https://forms.gle/r2Y4r2sLGiCz26Zb6
📅 IMPORTANT DATE
The last date for receiving applications is On or Before 07 August 2026, 11:59 pm.
📫 CONTACT INFORMATION
📌 ADDRESS FOR COMMUNICATION
Dr. Shelas Sathyan, Assistant Professor, Department of Electrical and Electronics Engineering, National Institute of Technology, Tiruchirappalli, Tamil Nadu, India 620015.
📣 OFFICIAL SOURCE / REFERENCE
The National Institute of Technology, Tiruchirappalli invites applications from eligible candidates for the Junior Research Fellow (JRF) and Project Associate – I positions.
Recruitment: View Official Notification
Reference: https://www.nitt.edu/home/other/jobs/EEE_SS_JRF_JUL_2026.pdf
In conclusion, this opportunity at NIT Trichy offers a significant platform for aspiring researchers in the field of Electrical and Electronics Engineering. Candidates meeting the eligibility criteria are encouraged to apply and contribute to cutting-edge research in power electronics.







